Transient Thermal Characterization of <i>?</i>-Ga<sub>2</sub>O<sub>3</sub> Schottky Barrier Diodes
نویسندگان
چکیده
This paper studies transient thermal characteristics of ?-Ga2O3 Schottky barrier diode (SBD) packaged in TO-220. Planar and metal-oxide-semiconductor (MOS) trench anode types are evaluated. Junction temperature is estimated from dependency forward conduction measuring SBD characteristics. confirms the completeness processed junction on with extracted ideal factor height SBDs. The measured developed SBDs proved to have higher resistance compared commercially available SiC left much be improved.
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ژورنال
عنوان ژورنال: IEICE Electronics Express
سال: 2022
ISSN: ['1349-2543', '1349-9467']
DOI: https://doi.org/10.1587/elex.19.20210558